document number: 94096 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 15-apr-08 1 fast soft recovery rectifier diode, 20 a 20etf..pbf soft recovery series vishay high power products features/description the 20etf..pbf fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. the glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. this product series has been designed and qualified for industrial level and lead (pb)-free. applications ? output rectification and freewheeling in inverters, choppers and converters ? input rectifications where se vere restrictions on conducted emi should be met product summary v f at 10 a < 1.2 v i fsm 300 a v rrm 200 to 600 v anode 1 2 3 cathode to-220ac base cathode available pb-free rohs* compliant major ratings and characteristics symbol characteristics values units v rrm range 200 to 600 v i f(av) sinusoidal waveform 20 a i fsm 300 t rr 1 a, 100 a/s 60 ns v f 10 a, t j = 25 c 1.2 v t j range - 40 to 150 c voltage ratings part number v rrm , maximum peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm at 150 c ma 20ETF02PBF 200 300 5 20etf04pbf 400 500 20etf06pbf 600 700 absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) t c = 97 c, 180 conduction half sine wave 20 a maximum peak one cycle non-repetitive surge current i fsm 10 ms sine pulse, rated v rrm applied 250 10 ms sine pulse, no voltage reapplied 300 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 316 a 2 s 10 ms sine pulse, no voltage reapplied 442 maximum i 2 t for fusing i 2 t t = 0.1 to 10 ms, no voltage reapplied 4420 a 2 s * pb containing terminations are not rohs compliant, exemptions may apply
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 94096 2 revision: 15-apr-08 20etf..pbf soft recovery series vishay high power products fast soft recovery rectifier diode, 20 a electrical specifications parameter symbol test conditions values units maximum forward voltage drop v fm 20 a, t j = 25 c 1.3 v forward slope resistance r t t j = 150 c 12.5 m threshold voltage v f(to) 0.9 v maximum reverse leakage current i rm t j = 25 c v r = rated v rrm 0.1 ma t j = 150 c 5.0 recovery characteristics parameter symbol test conditions values units reverse recovery time t rr i f at 20 apk 100 a/s 25 c 160 ns reverse recovery current i rr 10 a reverse recovery charge q rr 1.25 c snap factor s typical 0.6 i fm t rr dir dt i rm(rec) q rr t t a t b thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg - 40 to 150 c maximum thermal resistance, junction to case r thjc dc operation 0.9 c/w maximum thermal resistance, junction to ambient r thja 62 typical thermal resistance, case to heatsink r thcs mounting surface, smooth and greased 0.5 approximate weight 2g 0.07 oz. mounting torque minimum 6 (5) kgf cm (lbf in) maximum 12 (10) marking device case st yle to-220ac 20etf06
document number: 94096 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 15-apr-08 3 20etf..pbf soft recovery series fast soft recovery rectifier diode, 20 a vishay high power products fig. 1 - current rating characteristics fig. 2 - current rating characteristics fig. 3 - forward power loss characteristics fig. 4 - forward powe r loss characteristics fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current 80 70 150 06 maximum allowable case temperature (c) average forward current (a) 4 28 110 10 22 130 90 140 120 30 60 90 120 180 20etf.. series r thjc (dc) = 0.9 k/w conduction angle 12 14 16 18 20 100 ? 90 80 150 025 maximum allowable case temperature (c) average forward current (a) 15 530 110 35 120 100 10 20 130 140 20etf.. series r thjc (dc) = 0.9 k/w 30 60 90 120 180 dc ? conduction period 10 0 35 0 maximum average forward power loss (w) average forward current (a) 20 25 25 20 10 15 5 5 15 30 rms limit 20etf.. series t j = 150 c conduction angle 180 120 90 60 30 ? 5 0 45 0 maximum average forward power loss (w) average forward current (a) 30 25 35 30 10 10 20 35 5 15 25 15 20 40 180 120 90 60 30 dc rms limit 20etf.. series t j = 150 c ? conduction period 300 50 1 10 100 peak half sine wave forward current (a) number of equal amplitude half cycle current pulses (n) 200 100 150 250 at any rated load condition and with rated v rrm applied following surge. initial t j = 150 c at 60 hz 0.0083 s at 50 hz 0.0100 s 20etf.. series 400 150 50 0.001 0.01 1 peak half sine wave forward current (a) pulse train duration (s) 300 100 200 250 350 550 maximum non-repetitive surge current versus pulse train duration. initial t j = 150 c no voltage reapplied rated v rrm reapplied 20etf.. series 0.1 500 450
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 94096 4 revision: 15-apr-08 20etf..pbf soft recovery series vishay high power products fast soft recovery rectifier diode, 20 a fig. 7 - forward voltage drop characteristics fig. 8 - recovery time characteristics, t j = 25 c fig. 9 - recovery time characteristics, t j = 150 c fig. 10 - recovery charge characteristics, t j = 25 c fig. 11 - recovery charge characteristics, t j = 150 c 1000 10 1 012345 instantaneous forward current (a) instantaneous forward voltage (v) 100 20etf.. series t j = 25 c t j = 150 c 0.20 0.05 0 0 200 400 600 800 1000 t rr - maximum reverse recovery time (s) di/dt - rate of fall of forward current (a/s) 0.10 0.15 20etf.. series t j = 25 c i fm = 1 a i fm = 5 a i fm = 10 a i fm = 20 a i fm = 30 a 0.5 0.3 0 0 200 400 600 800 1000 t rr - maximum reverse recovery time (s) di/dt - rate of fall of forward current (a/s) 0.1 0.2 20etf.. series t j = 150 c i fm = 30 a i fm = 1 a i fm = 20 a i fm = 10 a i fm = 5 a 0.4 70 0 0 200 400 600 800 1000 i rr - maximum reverse recovery current (a) di/dt - rate of fall of forward current (a/s) 30 50 40 60 i fm = 30 a i fm = 20 a i fm = 10 a i fm = 5 a i fm = 1 a 20etf.. series t j = 25 c 20 10 100 60 0 0 200 400 600 800 1000 i rr - maximum reverse recovery current (a) di/dt - rate of fall of forward current (a/s) 20 40 80 i fm = 30 a i fm = 20 a i fm = 10 a i fm = 5 a i fm = 1 a 20etf.. series t j = 150 c
document number: 94096 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 15-apr-08 5 20etf..pbf soft recovery series fast soft recovery rectifier diode, 20 a vishay high power products fig. 12 - recovery current characteristics, t j = 25 c fig. 13 - recovery current characteristics, t j = 150 c fig. 14 - thermal impedance z thjc characteristics 3.0 0 0 200 400 600 800 1000 q rr - maximum reverse recovery charge (c) di/dt - rate of fall of forward current (a/s) 1.0 2.0 4.0 0.5 1.5 2.5 3.5 i fm = 1 a i fm = 5 a i fm = 10 a i fm = 20 a i fm = 30 a 20etf.. series t j = 25 c 10 6 0 0 200 400 600 800 1000 q rr - maximum reverse recovery charge (c) di/dt - rate of fall of forward current (a/s) 2 4 8 20etf.. series t j = 150 c i fm = 30 a i fm = 20 a i fm = 10 a i fm = 5 a i fm = 1 a 1 3 5 7 9 1 10 1 0.0001 0.001 0.01 0.1 square wave pulse duration (s) z thjc - transient thermal impedance (k/w) 0.1 0.01 single pulse 20etf.. series steady state value (dc operation) d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 94096 6 revision: 15-apr-08 20etf..pbf soft recovery series vishay high power products fast soft recovery rectifier diode, 20 a ordering information table 1 - current rating (20 = 20 a) 2 - circuit configuration: e = single diode 3 - package: t = to-220ac 4 - type of silicon: f = fast soft recovery rectifier 5 - voltage code x 100 = v rrm 6 - none = standard production pbf = lead (pb)-free 02 = 200 v 04 = 400 v 06 = 600 v device code 5 13 24 6 20 e t f 06 pbf links to related documents dimensions http://www.vishay.com/doc?95221 part marking information http://www.vishay.com/doc?95224
document number: 95221 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 07-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 to-220ac outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and tolerancin g as per asme y14.5m-1994 (2) lead dimension and fini sh uncontrolled in l1 (3) dimension d, d1 and e do not in clude mold flash. mold flash shall not exceed 0.127 mm (0. 005") per side. these dimensions are m easured at the outermost extrem es of the plastic body (4) dimension b1, b3 and c1 apply to base metal only (5) controlling dimension: inches (6) thermal pad contour optional with in dimensions e, h1, d2 and e1 (7) dimension e2 x h1 define a zone where stamping and singulation irregularities are allowed (8) outline conforms to jedec to-220, d2 (minimum) where dimensions are derived from the actual package outline symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.25 4.65 0.167 0.183 e1 6.86 8.89 0.270 0.350 6 a1 1.14 1.40 0.045 0.055 e2 - 0.76 - 0.030 7 a2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105 b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208 b1 0.38 0.97 0.015 0.038 4 h1 6.09 6.48 0.240 0.255 6, 7 b2 1.20 1.73 0.047 0.068 l 13.52 14.02 0.532 0.552 b3 1.14 1.73 0.045 0.068 4 l1 3.32 3.82 0.131 0.150 2 c 0.36 0.61 0.014 0.024 l3 1.78 2.13 0.070 0.084 c1 0.36 0.56 0.014 0.022 4 l4 0.76 1.27 0.030 0.050 2 d 14.85 15.25 0.585 0.600 3 ? p 3.54 3.73 0.139 0.147 d1 8.38 9.02 0.330 0.355 q 2.60 3.00 0.102 0.118 d2 11.68 12.88 0.460 0.507 6 ? 90 to 93 90 to 93 e 10.11 10.51 0.398 0.414 3, 6 13 2 d d1 h1 q detail b c a b l e1 lead tip l4 l3 e e2 ? p 0.015 a b mm 0.014 a b mm s eating plane c a2 a1 a a a lead assignments diode s 1 + 2 - cathode 3 - anode conforms to jedec outline to-220ac (6) (6) (7) (6) (7) view a - a e1 (6) d2 (6) h1 thermal pad e detail b d l1 d 123 c c 2 x b2 2 x b
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